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Time of the last modification database: 2019-01-22 11:08:13
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  1. Yao, X., Zhong, S., Hu, T., Cheng, H., Zhang, D., Uniformly stable and attractive of fractional-order memristor-based neural networks with multiple delays. Applied Mathematics and Computation, vol.347, pp.392-403, 15th April 2019.
  2. Luo, M., Cheng, J., Liu, X., Zhong, S., An extended synchronization analysis for memristor-based coupled neural networks via aperiodically intermittent control. Applied Mathematics and Computation, vol.344–345, pp.163-182, 1st March 2019.
  3. Rodríguez, A.C., Arango, I.C., Gomez, M.F., Dominguez, C., Trastoy, J., Urban, C., Sulekar, S., Nino, J.C., Schuller, I.K., Gomez, M.E., Ramírez, J.G., Resistive switching in multiferroic BiFeO3 films: Ferroelectricity vs vacancy migration. Solid State Communications, vol.288, pp.38-42, February 2019.
  4. Zulehner, A., Datta, K., Sengupta, I., Wille, R., A Staircase Structure for Scalable and Efficient Synthesis of Memristor-Aided Logic. The 24th Asia and South Pacific Design Automation Conference, pp.1-6, 22nd January 2019.
  5. Melo, A.H.N., Valença, E., Rodrigues, C.L., Macêdo, M.A., Transition from homogeneous to filamentary behavior in ZnO/ZnO-Al thin films. Journal of Alloys and Compounds, vol.770, pp.1200-1207, 5th January 2019.
  6. Aghnout, S., Karimi, G., Modeling triplet spike timing dependent plasticity using a hybrid TFT-memristor neuromorphic synapse. Integration, vol.64, pp.184-191, January 2019.
  7. García, A.A., Reyes, L.O., Analysis and parameter extraction of memristive structures based on Strukov's non-linear model. Journal of Semiconductors, vol.40, no.1, pp.1-8, January 2019.
  8. Fouad, A.H., Radwan, A.G., Memristor-Based Quinary Half Adder. AEU - International Journal of Electronics and Communications, pp.1-8, January 2019.
  9. Aziz, T.N.T.A., Rosli, A.B., Yusoff, M.M., Herman, S.H., Zulkifli, Z., Transparent hybrid ZnO-graphene film for high stability switching behavior of memristor device. Materials Science in Semiconductor Processing, vol.89, pp.68-76, January 2019.
  10. Teo, J.H.L., Teo, H.L., Ghazali, A., Hamid, F.A., Configurations of Memristor-Based APUF for Improved Performance. Bulletin of Electrical Engineering and Informatics, vol.8, no.1, 2019.
  11. Chakraborty, A., Saurabh, V., Gupta, P.S., Kumar, R., Majumdar, S., Das, S., Rahaman, H., In-memory designing of Delay and Toggle flip-flops utilizing Memristor Aided loGIC (MAGIC). Integration, the VLSI Journal, pp.1-11, 26th December 2018.
  12. Nafea, S.F., Dessouki, A.A.S., El-Rabaie, S., Elnaghi, B.E., Ismail, Y., Mostafa, H., An accurate model of domain-wall-based spintronic memristor. Integration, pp.1-14, 23rd December 2018.
  13. Zhou, E., Fang, L., Yang, B., A general method to describe forgetting effect of memristors. Physics Letters A, pp.1-7, 21st December 2018.
  14. Kim, K.M., Xu, N., Shao, X., Yoon, K.J., Kim, H.J., Williams, R.S., Hwang, C.S., Single‐Cell Stateful Logic Using a Dual‐Bit Memristor. Rapid Research Letter, pp.1-8, 21st December 2018.
  15. Liu, J., Li, Z., Tang, Y., Hu, W., Wu, J., 3D Convolutional Neural Network Based on Memristor for Video Recognition. Pattern Recognition Letters, pp.1-9, 21st December 2018.
  16. Campbell, K.A., Bassine, R.A., Kabir, M.F., Astle, J., An optically-gated transistor comprised of amorphous M+ Ge2Se3 (M= Cu, Sn) for accessing and continuously programming a memristor. ACS Applied Electronic Materials, pp.1-33, 20th December 2018.
  17. Li, B., Zhao, Y., Shi, G., A Novel Design of Memristor-based Bidirectional Associative Memory Circuits Using Verilog-AMS. Neurocomputing, pp.1-12, 20th December 2018.
  18. Wang, C., Xiong, L., Sun, J., Yao, W., Memristor-based neural networks with weight simultaneous perturbation training. Nonlinear Dynamics, pp.1-14, 18th December 2018.
  19. Patil, S.R., Chougale, M.Y., Rane, T.D., Khot, S.S., Patil, A.A., Bagal, O.S., Jadhav, S.D., Sheikh, A.D., Kim, S., Dongale, T.D., Solution-Processable ZnO Thin Film Memristive Device for Resistive Random Access Memory Application. Electronics, vol.7, no.12, pp.1-12, 17th December 2018.
  20. Schmitt, R., Kubicek, M., Sediva, E., Trassin, M., Weber, M.C., Rossi, A., Hutter, H., Kreisel, J., Fiebig, M., Rupp, J.L.M., Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing. Advanced Functional Materials, pp.1-12, 17th December 2018.
  21. Zhang, Y., Yu, Y., Cui, X., Dynamical behaviors analysis of memristor-based fractional-order complex-valued neural networks with time delay. Applied Mathematics and Computation, vol.339, pp.242-258, 15th December 2018.
  22. Gomes, J.L., Nunes, L.C., Sobolev, N.A., Pedro, J.C., Memristive Properties of GaN HEMTs Containing Deep‐Level Traps. Physica Status Solidi b, pp.1-5, 14th December 2018.
  23. Ye, X., Wang, X., Mou, J., Yan, X., Xian, Y., Characteristic analysis of the fractional-order hyperchaotic memristive circuit based on the Wien bridge oscillator. The European Physical Journal Plus, vol.133, no.12, pp.1-15, 14th December 2018.
  24. Lupo, N., Pérez, E., Wenger, C., Maloberti, F., Bonizzoni, E., Development of Self-rectifying TaO y/Nanoporous TaO x Memristor Synapse for Suppressing Non-neural Signal in the Large-scale Neuromorphic Array System. IEEE Transactions on Circuits and Systems I: Regular Papers, pp.1-13, 13th December 2018.
  25. Choi, S., Jang, S., Moon, J.-H., Kim, J.C., Jeong, H.Y., Jang, P., Lee, K.-J., Wang, G., A self-rectifying TaO y/nanoporous TaO x memristor synaptic array for learning and energy-efficient neuromorphic systems. NPG Asia Materials, pp.1-10, 13th December 2018.
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