admin login

Time of the last modification database: 2016-08-23 14:10:27
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] ... [107] >>
  1. Abolmasoumi, A.H., Khosravinejad, S., Chaos Control in Memristor-Based Oscillators Using Intelligent Terminal Sliding Mode Controller. International Journal of Computer Theory and Engineering, vol.8, no.6, pp.506-511, December 2016.
  2. Battistoni, S., Dimonte, A., Erokhin, V., Spectrophotometric characterization of organic memristive devices. Organic Electronics, pp.79–83, November 2016.
  3. Xu, Q., Wang, N., Bao, B., Chen, M., Li, Ch., A feasible memristive Chua's circuit via bridging a generalized memristor. Journal of Applied Analysis and Computation, vol.6, no.4, pp.1152-1163, November 2016.
  4. Nyenke, Ch., Dong, L., Fabrication of a W/CuxO/Cu memristor with sub-micron holes for passive sensing of oxygen. Microelectronic Engineering, vol.164, pp.48–52, 1st October 2016.
  5. Spasic, A.M., Jovanovic, J.M., Manojlovic, V., Jovanovic, M., Breaking of double emulsions based on electrohydrodynamics principles. Journal of Colloid and Interface Science, vol.479, pp.165–172, 1st October 2016.
  6. Elashkar, N.E., Aboudina, M., Fahmy, H.A.H., Ibrahim, G.H., Khalil, A.H., Memristor based BPSK and QPSK demodulators with nonlinear dopant drift model. Microelectronics Journal, pp.17–24, October 2016.
  7. Njitacke, Z.T., Kengne, J., Fotsin, H.B., Nguomkam Negou, A., Tchiotsop, D., Coexistence of multiple attractors and crisis route to chaos in a novel memristive diode bidge-based Jerk circuit. Chaos, Solitons & Fractals, vol.91, pp.180–197, October 2016.
  8. Prusakova, V., Collini, C., Lunelli, L., Vanzetti, L., Chiappini, A., Lorenzelli, L., Pederzolli, C., Chiasera, A., Ferrari, M., Dirè, S., Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films. Materials & Design, vol.105, pp.359–365, 5th September 2016.
  9. Zaman, A., Electrical Characterization of Tungsten Oxide Based Memristor for Improved Resistive Switching. Stander Symposium Posters, Book 737, 4th September 2016.
  10. Lequeux, S., Sampaio, J., Cros, V., Yakushiji, K., Fukushima, A., Matsumoto, R., Kubota, H., Yuasa, S., Grollier, J., A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy. Scientific Reports, vol.6, no.31510, pp.1-7, 19th August 2016.
  11. Corinto, F., Forti, M., Memristor Circuits: Flux—Charge Analysis Method. IEEE Transactions on Circuits and Systems I: Regular Papers, pp.1-13, 19th August 2016.
  12. Campbell, K.A., Self-Directed Channel Memristor for High Temperature Operation. arXiv:1608.05357v1, [cond-mat.mes-hall], 18th August 2016.
  13. Rajivghanthi, Ch., Rihan, F.A., Lakshmanan, S., Rakkiyappan, R., Muthukumar, P., Synchronization of memristor-based delayed BAM neural networks with fractional-order derivatives. Complexity, pp.1-15, 17th August 2016.
  14. Zheng, Ch.-D., Xian, Y., On synchronization for chaotic memristor-based neural networks with time-varying delays. Neurocomputing, In Press, Accepted Manuscript, 16th August 2016.
  15. Jeong, D.S., Kim, K.M., Kim, S., Choi, B.J., Hwang, Ch.S., Memristors for Energy-Efficient New Computing Paradigms. Advanced Electronic Materials, pp.1-27, 16th August 2016.
  16. Aljafar, M., Long, P., Perkowski, M., Memristor-Based Volistor Gates Compute Logic with Low Power Consumption. BioNanoScience, pp.1-21, 15th August 2016.
  17. Grönroos, M., Fabrication and Pseudo-Analog Characteristics of Ta2O5 -Based ReRAM Cell. Master's thesis, University of Turku, Department of Information Technology, pp.99, 15th August 2016.
  18. Tulina, N.A., Rossolenko, A.N., Ivanov, A.A., Sirotkin, V.V., Shmytko, I.M., Borisenko, I.Yu., Ionov, A.M., Nd2 − xCexCuO4 − y/Nd2 − xCexOy boundary and resistive switchings in mesoscopic structures on base of epitaxial Nd1.86Ce0.14CuO4 − у films. Physica C: Superconductivity and its Applications, vol.527, pp.41–45, 15th August 2016.
  19. Chakraborty, A., Rahaman, H., Implementation of Combinational circuits via Material Implication using Memristors. IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics, pp.6, 13th August 2016.
  20. Cortese, S., Trapatseli, M., Khiat, A., Prodromakis, T., On the origin of resistive switching volatility in Ni/TiO2/Ni stacks. Journal of Applied Physics, vol.120, no.065104, pp.1-8, 10th August 2016.
  21. O'Kelly, C.J., Abunahla, H.N.M., Jaoude, M.A., Homouz, D., Mohammad, B., Sub-Threshold Continuum Conductance Change In NbO Pt Memristor Interfaces. The Journal of Physical Chemistry C, pp.1-20, 10th August 2016.
  22. Wei, H., Li, R., Chen, Ch., Tu, Z., Extended dissipative analysis for memristive neural networks with two additive time-varying delay components. Neurocomputing, In Press, Accepted Manuscript, 9th August 2016.
  23. Mou, J., Sun, K., Ruan, J., He, S., A nonlinear circuit with two memcapacitors. Nonlinear Dynamics, pp.1–10, 8th August 2016.
  24. Wang, W., Panin, G.N., Fu, X., Zhang, L., Ilanchezhiyan, P., Pelenovich, V.O., Fu, D., Kang, T.W., MoS2 memristor with photoresistive switching. Scientific Reports, vol.6, no.31224, pp.1-10, 5th August 2016.
  25. Yan, Z.B., Yau, H.M., Li, Z.W., Gao, X.S., Dai, J.Y., Liu, J.-M., Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions. Applied Physics Letters, vol.109, no.5, pp.1-5, 4th August 2016.
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] ... [107] >>