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Time of the last modification database: 2016-09-27 23:32:04
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  1. Abolmasoumi, A.H., Khosravinejad, S., Chaos Control in Memristor-Based Oscillators Using Intelligent Terminal Sliding Mode Controller. International Journal of Computer Theory and Engineering, vol.8, no.6, pp.506-511, December 2016.
  2. Wu, J., Wang, L., Chen, G., Duan, S., A memristive chaotic system with heart-shaped attractors and its implementation. Chaos, Solitons & Fractals, vol.92, pp.20–29, November 2016.
  3. Battistoni, S., Dimonte, A., Erokhin, V., Spectrophotometric characterization of organic memristive devices. Organic Electronics, pp.79–83, November 2016.
  4. Xu, Q., Wang, N., Bao, B., Chen, M., Li, Ch., A feasible memristive Chua's circuit via bridging a generalized memristor. Journal of Applied Analysis and Computation, vol.6, no.4, pp.1152-1163, November 2016.
  5. Zhanbossinov, A., Smagulova, K., James, A.P., CMOS-memristor Dendrite Threshold Circuits. 13th biennial IEEE Asia Pacific Conference on Circuits & Systems, 25th October 2016.
  6. Pradhan, A.K., Pradhan, S., Mundle, R., Xiao, B., Graphene Oxide and ZnO/Al:ZnO Based Transparent Resistive Switching Devices for Memristor Applications. Pacific RIM Meeting on Electrochemical and Solid-State Science, 2nd October 2016.
  7. Nyenke, Ch., Dong, L., Fabrication of a W/CuxO/Cu memristor with sub-micron holes for passive sensing of oxygen. Microelectronic Engineering, vol.164, pp.48–52, 1st October 2016.
  8. Spasic, A.M., Jovanovic, J.M., Manojlovic, V., Jovanovic, M., Breaking of double emulsions based on electrohydrodynamics principles. Journal of Colloid and Interface Science, vol.479, pp.165–172, 1st October 2016.
  9. Elashkar, N.E., Aboudina, M., Fahmy, H.A.H., Ibrahim, G.H., Khalil, A.H., Memristor based BPSK and QPSK demodulators with nonlinear dopant drift model. Microelectronics Journal, pp.17–24, October 2016.
  10. Njitacke, Z.T., Kengne, J., Fotsin, H.B., Nguomkam Negou, A., Tchiotsop, D., Coexistence of multiple attractors and crisis route to chaos in a novel memristive diode bidge-based Jerk circuit. Chaos, Solitons & Fractals, vol.91, pp.180–197, October 2016.
  11. Martínez, L., Becerra, D., Agarwal, V., Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching. Superlattices and Microstructures, In Press, Accepted Manuscript, 24th September 2016.
  12. Kim, K.M., Zhang, J., Graves, C., Yang, J.J., Choi, B.J., Hwang, Ch.S., Li, Z., Williams, R.S., Low power, self-rectifying, and forming-free memristor with an asymmetric programing voltage for a high density crossbar application. Nano Letters, pp.1-30, 23rd September 2016.
  13. Khan, A.K., Lee, B.H., Monolayer MoS2 metal insulator transition based memcapacitor modeling with extension to a ternary device. AIP Advances, vol.6, no.9, pp.1-7, 23rd September 2016.
  14. Chen, Z., Zhou, L., Ma, J., Wang, Z., Zhang, Q., A New Multi-wing Chaotic System and Its Fractional-Order Form. Theory, Methodology, Tools and Applications for Modeling and Simulation of Complex Systems, vol.645 of the series Communications in Computer and Information Science, pp.98-107, 22nd September 2016.
  15. Huang, P., Kang, J., Zhao, Y., Chen, S., Han, R., Zhou, Z., Chen, Z., Ma, W., Li, M., Liu, L., Liu, X., Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits. Advanced Materials, pp.1-7, 22nd September 2016.
  16. Zheng, M., Li, L., Peng, H., Xiao, J., Yang, Y., Zhao, H., Finite-time stability and synchronization for memristor-based fractional-order Cohen-Grossberg neural network. The European Physical Journal B, vol.89, no.9, 21st September 2016.
  17. Maan, A.K., James, A.P., Voltage Controlled Memristor Threshold Logic Gates. arXiv:1609.04919v1, [cs.ET], 16th September 2016.
  18. Jiang, P., Zeng, Z., Chen, J., On the periodic dynamics of a memristor-based neural networks with leakage and time-varying delays. Neurocomputing, In Press, Accepted Manuscript, 15th September 2016.
  19. Mozaffari, S.N., Tragoudas, S., Haniotakis, T., More Efficient Testing of Metal-oxide Memristor-based Memory. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, pp.1-12, 13th September 2016.
  20. Abunahla, H., Jaoude, M.A., O'Kelly, C.J., Mohammad, B., Sol-gel/drop-coated micro-thick TiO2 memristors for γ-ray sensing. Materials Chemistry and Physics, In Press, Corrected Proof, 12th September 2016.
  21. Abdurahman, A., Jiang, H., New results on exponential synchronization of memristor-based neural networks with discontinuous neuron activations. Neural Networks, In Press, Accepted Manuscript, 10th September 2016.
  22. Serb, A., Khiat, A., Prodromakis, T., Practical Demonstration of a Memristive Fuse. arXiv:1609.02410v1, [cs.ET], 8th September 2016.
  23. Shen, J., Shang, D., Chai, Y., Wang, Y., Cong, J., Shen, S., Yan, L., Wang, W., Sun, Y., Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor. arXiv:1609.03412v1, [cs.ET], 7th September 2016.
  24. Prusakova, V., Collini, C., Lunelli, L., Vanzetti, L., Chiappini, A., Lorenzelli, L., Pederzolli, C., Chiasera, A., Ferrari, M., Dirè, S., Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films. Materials & Design, vol.105, pp.359–365, 5th September 2016.
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