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Time of the last modification database: 2016-02-06 16:33:19
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  1. Abolmasoumi, A.H., Khosravinejad, S., Chaos Control in Memristor-Based Oscillators Using Intelligent Terminal Sliding Mode Controller. International Journal of Computer Theory and Engineering, vol.8, no.6, pp.506-511, December 2016.
  2. Cai, Z., Huang, L., Zhu, M., Wang, D., Finite-time stabilization control of memristor-based neural networks. Nonlinear Analysis: Hybrid Systems, vol.20, pp.37–54, May 2016.
  3. Sakthivel, R., Anbuvithya, R., Mathiyalagan, K., Ma, Y.-K., Prakash, P., Reliable anti-synchronization conditions for BAM memristive neural networks with different memductance functions. Applied Mathematics and Computation, vol.275, pp.213–228, 15th February 2016.
  4. Kim, K.M., Yang, J.J., Strachan, J.P., Grafals, E.M., Ge, N., Melendez, N.D., Li, Z., Williams, R.S., Voltage divider effect for the improvement of variability and endurance of TaOx memristor. Scientific Reports, vol.6, no.20085, pp.1-6, 2nd February 2016.
  5. Xu, Q., Lin, Y., Bao, B., Chen, M., Multiple attractors in a non-ideal active voltage-controlled memristor based Chua's circuit. Chaos, Solitons & Fractals, vol.83, pp.186–200, February 2016.
  6. Cao, J., Xie, J.W., Zhang, X., Zhou, J., Yuan, J.W., Jhun, Ch.G., Research on the Characteristics and the Mechanism of an Organic Single-Layer Resistance Change Device. Journal of Nanoelectronics and Optoelectronics, vol.11, no.1, pp.56-61, February 2016.
  7. Merkel, C., Kudithipudi, D., Unsupervised Learning in Neuromemristive Systems. arXiv:1601.07482v1, [cs.ET], 27th January 2016.
  8. Dongale, T.D., Patil, P.J., Desai, N.K., Chougule, P.P., Kumbhar, S.M., Waifalkar, P.P., Patil, P.B., Vhatkar, R.S., Takale, M.V., Gaikwad, P.K., Kamat, R.K., TiO2 based Nanostructured Memristor for RRAM and Neuromorphic Applications: A Simulation Approach. arXiv:1601.06503v1, [cond-mat.mtrl-sci], 25th January 2016.
  9. Yan, K., Peng, M., Yu, X., Cai, X., Chen, S., Hu, H., Chen, B., Gao, X., Dong, B., Zou, D., High-Performance Perovskite Memristor Based on Methyl Ammonium Lead Halides. Journal of Materials Chemistry C, pp.1-16, 25th January 2016.
  10. Rozanov, R.Yu., Kondrashov, V.A., Nevolin, V.K., Chaplygin, Yu.A., Characteristics of chloride memristors based on nanothick metal films. Russian Microelectronics, vol.45, no.1, pp.26-32, 23rd January 2016.
  11. Wu, H., Wang, C., Fu, H., Zhou, J., Zheng, S., Unipolar memristive switching in bulk positive temperature coefficient ceramic thermistor. Modern Physics Letters B, Online Ready, 21st January 2016.
  12. Sheldon, F.C., Di Ventra, M., First-Order Phase Transitions in Memristive Networks. arXiv:1601.05772v1, [cond-mat.stat-mech], 21st January 2016.
  13. Sarma, S., Mothudi, B.M., Dhlamini, M.S., Observed coexistence of memristive, memcapacitive and meminductive characteristics in polyvinyl alcohol/cadmium sulphide nanocomposites. Journal of Materials Science: Materials in Electronics, pp.1-8, 20th January 2016.
  14. Liu, Y., Dwyer, Ch., Lebeck, A.R., Combined Compute and Storage: Configurable Memristor Arrays to Accelerate Search. arXiv:1601.05273v1, [cs.ET], 20th January 2016.
  15. Zhong, K., Yang, Q., Zhu, S., New algebraic conditions for ISS of memristive neural networks with variable delays. Neural Computing and Applications, pp.1-9, 19th January 2016.
  16. Wang, H., Duan, S., Huang, T., Li, Ch., Wang, L., Novel Stability Criteria for Impulsive Memristive Neural Networks with Time-Varying Delays. Circuits, Systems, and Signal Processing, pp.1-22, 18th January 2016.
  17. Gorodetskiy, D.V., Guselnikov, A.V., Shevchenko, S.N., Kanygin, M.A., Okotrub, A.V., Pershin, Y.V., Memristive model of hysteretic field emission from carbon nanotube arrays. arXiv:1601.04335v1, [cond-mat.mes-hall], 17th January 2016.
  18. Gibson, G.A., Musunuru, S., Zhang, J., Vandenberghe, K., Lee, J., Hsieh, Ch.-Ch., Jackson, W., Jeon, Y., Henze, D., Li, Z., Williams, R.S., An accurate locally active memristor model for S-type negative differential resistance in NbOx. Applied Physics Letters, vol.118, no.2, pp.1-5, 14th January 2016.
  19. Hong, D.S., Chen, Y.S., Sun, J.R., Shen, B.G., Ternary Synaptic Plasticity Arising from Memdiode Behavior of TiOx Single Nanowires. Advanced Electronic Materials, Early View, 13th January 2016.
  20. Pershin, Y.V., Di Ventra, M., Memcomputing Implementation of Ant Colony Optimization. Neural Processing Letters, pp.1-13, 13th January 2016.
  21. Feali, M.S., Ahmadi, A., Realistic Hodgkin–Huxley Axons Using Stochastic Behavior of Memristors. Neural Processing Letters, pp.1-4, 12th January 2016.
  22. Cassidy, J.F., Fox, D., Betts, A.J., A model for the voltammetric behaviour of TiO2 memristors. Journal of Solid State Electrochemistry, pp.1-6, 12th January 2016.
  23. Kawakita, M., Okabe, K., Kimura, T., Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide. Applied Physics Letters, vol.108, no.2, pp.1-4, 11th January 2016.
  24. Pershin, Y.V., Di Ventra, M., Memristive and Memcapacitive Models of Physarum Learning. Advances in Physarum Machines, vol.21, pp.413-422, 10th January 2016.
  25. Gale, E., Adamatzky, A., de Lacy Costello, B., On the Memristive Properties of Slime Mould. Advances in Physarum Machines, vol.21, pp.75-90, 10th January 2016.
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