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Time of the last modification database: 2019-02-20 18:07:55
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  1. Pabst, O., Rectifying memristor bridge circuit realized with human skin. Journal of Electrical Bioimpedance, vol.9, no.1, pp.184-192, 31st December 2019.
  2. Escudero, M., Vourkas, I., Rubio, A., Moll, F., On the Variability-aware Design of Memristor-based Logic Circuits. IEEE 18th International Conference on Nanotechnology (IEEE-NANO), pp.1-4, 23rd July 2019.
  3. Yao, X., Zhong, S., Hu, T., Cheng, H., Zhang, D., Uniformly stable and attractive of fractional-order memristor-based neural networks with multiple delays. Applied Mathematics and Computation, vol.347, pp.392-403, 15th April 2019.
  4. Luo, M., Cheng, J., Liu, X., Zhong, S., An extended synchronization analysis for memristor-based coupled neural networks via aperiodically intermittent control. Applied Mathematics and Computation, vol.344–345, pp.163-182, 1st March 2019.
  5. Petrzela, J., Polák, L., Minimal Realizations of Autonomous Chaotic Oscillators Based on Trans-Immittance Filters. IEEE Access, pp.1-17, 14th February 2019.
  6. Dong, X., Jiang, X., Li, W., Guo, R., Wang, J., A novel design of a-Si based memristor with optical readout functionality utilizing silicon prism. 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectron, vol.10843, 8th February 2019.
  7. Sadecki, J., Marszalek, W., Analysis of a memristive diode bridge rectifier. Electronics Letters, vol.55, no.3, pp.120-122, 7th February 2019.
  8. Wang, F.Z., Li, L., Shi, L., Wu, H., Chua, L.O., Φ memristor: Real memristor found. Journal of Applied Physics, vol.125, no.5, pp.1-18, 7th February 2019.
  9. Guan. Z.-H., Hu, B., Shen, X., Hybrid Memristor-Based Impulsive Neural Networks. Introduction to Hybrid Intelligent Networks, pp.155-193, 2nd February 2019.
  10. Meng, F., Zeng, X., Wang, Z., Impulsive anti-synchronization control for fractional-order chaotic circuit with memristor. Indian Journal of Physics, pp.1-8, 1st February 2019.
  11. Ambrosi, E., Bartlett, P., Berg, A.I., Brivio, S., Prodromakis, T., Burr, G., Deswal, S., Deuermeier, J., Haga, M., Kiazadeh, A., Kissling, G., Kozicki, M., Foroutan-Nejad, C., Gale, E., Gonzalez-Velo, Y., Goossens, A., Goux, L., Hasegawa, T., Hilgenkamp, H., Huang, R., Ibrahim, S., Ielmini, D., Kenyon, A.J., Kolosov, V., Li, Y., Majumdar, S., Milano, G., Raeishosseini, N., Rana, V., Ricciardi, C., Santamaria, M., Shluger, A., Valov, I., Waser, R., Williams, R.S., Wouters, D., Yang, Y., Zaffora, A., Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion. Faraday Discussions, vol.213, pp.115-150, 1st February 2019.
  12. Aono, M., Baeumer, C., Bartlett, P., Brivio, S., Prodromakis, T., Burr, G., Burriel, M., Carlos, E., Deswal, S., Deuermeier, J., Dittmann, R., Du, H., Gale, E., Hambsch, S., Hilgenkamp, H., Ielmini, D., Kenyon, A.J., Kiazadeh, A., Kindsmüller, A., Kissling, G., Koymen, I., Menzel, S., Asesio, D.P., Santamaria, M., Shluger, A., Thompson, D., Valov, I., Wang, W., Waser, R., Williams, R.S., Wrana, D., Wouters, D., Yang, Y., Zaffora, A., Valence change ReRAMs (VCM) - Experiments and modelling: general discussion. Faraday Discussions, vol.213, pp.259-286, 1st February 2019.
  13. Berg, A.I., Brivio, S., Brown, S., Burr, G., Prodromakis, T., Deswal, S., Deuermeier, J., Gale, E., Hwang, H., Ielmini, D., Indiveri, G., Kenyon, A.J., Kiazadeh, A., Koymen, I., Kozicki, M., Li, Y., Mannion, D., Ricciardi, C., Siegel, S., Speckbacher, M., Valov, I., Wang, W., Williams, R.S., Wouters, D., Yang, Y., Synaptic and neuromorphic functions: general discussion. Faraday Discussions, vol.213, pp.553–578, 1st February 2019.
  14. Romero, L.P., Ambrogio, S., Giordano, M., Cristiano, G., Bodini, M., Narayanan, P., Tsai, H., Shelby, R.M., Burr, G.W., Training fully connected networks with resistive memories: impact of device failures. Faraday Discussions, vol.213, pp.371–391, 1st February 2019.
  15. Liu, K., Qin, L., Zhang, X., Zhu, J., Sun, X., Yang, K., Cai, Y., Yang, Y., Huang, R., Interfacial redox processes in memristive devices based on valence change and electrochemical metallization. Faraday Discussions, vol.213, pp.41–52, 1st February 2019.
  16. Bose, S.K., Shirai, S., Mallinson, J.B., Brown, S.A., Synaptic dynamics in complex self-assembled nanoparticle networks. Faraday Discussions, vol.213, pp.471–485, 1st February 2019.
  17. Zaffora, A., Di Quarto, F., Habazaki, H., Valov, I., Santamaria, M., Electrochemically prepared oxides for resistive switching memories. Faraday Discussions, vol.213, pp.165–181, 1st February 2019.
  18. Payvand, M., Nair, M.V., Müller, L.K., Indiveri, G., A neuromorphic systems approach to in-memory computing with non-ideal memristive devices: from mitigation to exploitation. Faraday Discussions, vol.213, pp.487–510, 1st February 2019.
  19. Menzel, S., von Witzleben, M., Havel, V., Bottger, U., The ultimate switching speed limit of redox-based resistive switching devices. Faraday Discussions, vol.213, pp.197–213, 1st February 2019.
  20. Wouters, D.J., Menzel, S., Rupp, J.A.J., Hennen, T., Waser, R., On the universality of the I–V switching characteristics in non-volatile and volatile resistive switching oxides. Faraday Discussions, vol.213, pp.183–196, 1st February 2019.
  21. Wang, W., Pedretti, G., Milo, V., Carboni, R., Calderoni, A., Ramaswamy, N., Spinelli, A.S., Ielmini, D., Computing of temporal information in spiking neural networks with ReRAM synapses. Faraday Discussions, vol.213, pp.453–469, 1st February 2019.
  22. Rushchanskii, K.Z., Blügel, S., Ležaić, M., Ab initio phase diagrams of Hf–O, Zr–O and Y–O: a comparative study. Faraday Discussions, vol.213, pp.321–337, 1st February 2019.
  23. Baeumer, C., Heisig, T., Arndt, B., Skaja, K., Borgatti, F., Offi, F., Motti, F., Panaccione, G., Waser, R., Menzel, S., Dittmann, R., Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices. Faraday Discussions, vol.213, pp.215–230, 1st February 2019.
  24. Ambrosi, E., Bricalli, A., Laudato, M., Ielmini, D., Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices. Faraday Discussions, vol.213, pp.87–98, 1st February 2019.
  25. Kenyon, A.J., Munde, M.S., Ng, W.H., Buckwell, M., Joksas, D., Mehonic, A., The interplay between structure and function in redox-based resistance switching. Faraday Discussions, vol.213, pp.151–163, 1st February 2019.
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