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Time of the last modification database: 2015-03-29 16:02:53
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  1. Chen, W., Yang, X., Wang, F.Z., An Omnipotent Memristor Model with Controllable Window Functions. 17th UKSIM-AMSS International Conference on Modelling and Simulation, pp.600-605, 25th March 2015.
  2. Efeoglu, H., Gullulu, S., Karacalı, T., Resistive Switching of Reactive Sputtered TiO2 based Memristor in Crossbar Geometry. Applied Surface Science, In Press, Accepted Manuscript, pp.20, 23rd March 2015.
  3. Shen, X., Yin, K., Puzyrev, Y.S., Liu, Y., Sun, L., Li, R.-W., 2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3. Advanced Electronic Materials, Early View, 20th March 2015.
  4. Gupta, I., Serb, A., Berdan, R., Khiat, A., Regoutz, A., Prodromakis,T., A cell classifier for RRAM process development. Circuits and Systems II: Express Briefs, IEEE Transactions on, vol., no., pp.5, 19th March 2015.
  5. Li, Q., Serb, A., Prodromakis,T., Xu, H., A Memristor SPICE Model Accounting for Synaptic Activity Dependence. PLoS ONE, vol.10, no.3, pp.1-12, 18th March 2015.
  6. Li, L., Lu, L., Wang, Z., Li, Y., Yao, Y., Zhang, D., Yang, G., Yao, J., Viehland, D., Yang, Y., Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films. Scientific Reports, vol.5, pp.1-7, 18th March 2015.
  7. Sun, Y., Yan, X., Zheng, X., Liu, Y., Zhao, Y., Shen, Y., Liao, Q., Zhang, Y., High On-Off Ratio Improvement of ZnO-Based Forming-free Memristor by Surface Hydrogen Annealing. ACS Applied Materials & Interfaces, 18th March 2015.
  8. Llibre, J., Ponce, E., Valls, C., Uniqueness and Non-uniqueness of Limit Cycles for Piecewise Linear Differential Systems with Three Zones and No Symmetry. Journal of Nonlinear Science, Springer US, pp.27, 18th March 2015.
  9. Lu, L., Li, Ch., Zhao, Z., Bao, B., Xu, Q., Colpitts chaotic oscillator coupling with a generalized memristor. Mathematical Problems in Engineering, pp.12, 16th March 2015.
  10. Meng, Z., Xiang, Z., Passivity analysis of memristor-based recurrent neural networks with mixed time-varying delays. Neurocomputing, In Press, Accepted Manuscript, pp.24, 14th March 2015.
  11. Shen, X., Pennycook, T.J., Hernandez-Martin, D., Pérez, A., Varela, M., Puzyrev, Y.S., Leon, C., Sefrioui, Z., Santamaria, J., Pantelides, S.T., High On/Off Ratio Memristive Switching of Manganite-Cuprate Bilayer by Interfacial Magnetoelectricity. arXiv:1503.03601v1, [cond-mat.str-el], 12th March 2015.
  12. Shen, X., Yin, K., Liu, Y., Sun, L., Li, R.-W., Puzyrev, Y.S., Pantelides, S.T., Two-dimensional nanovaristors at grain boundaries account for memristive switching in polycrystalline BiFeO3. arXiv:1503.03592v1, [cond-mat.mtrl-sci], 12th March 2015.
  13. Suh, D.I., Bae, G.Y., Oh, H.S., Park, W., Neural coding using telegraphic switching of magnetic tunnel junction. Journal of Applied Physics, vol.117, no.17, pp.3, 10th March 2015.
  14. Zhou, P., Bai, R., Zheng, J., Projective Synchronization for a Class of Fractional-Order Chaotic Systems with Fractional-Order in the (1, 2) Interval. Entropy, vol.17, no.3, pp.1123-1134, 10th March 2015.
  15. Pershin, Y.V., Castelano, L.K., Hartmann, F., Lopez-Richard, V., Di Ventra, M., A Memcomputing Pascaline. arXiv:1503.04673v1, [cs.ET], 6th March 2015.
  16. Sun, Z., Zhao, Y., Zhao, D., Oxygen controlled bipolar switching in NiO memristor. Bulletin of the American Physical Society, 5th March 2015.
  17. Liu, Y., Hernandez-Martin, D., te Velthuis, S.G.E., Varela, M., Munoz, A.P., Cabero, M., Leon, C., Sanchez-Santolino, G., Tornos, J., Santamaria, J., Pennycook, S.J., Oxygen vacancy control of a ferroelectric memristor. Bulletin of the American Physical Society, 4th March 2015.
  18. Tierney, B., Hjalmarson, H., McLain, M., Mamaluy, D., The Role of Joule Heating and Defect Chemistry in Memristor Modeling. Bulletin of the American Physical Society, 4th March 2015.
  19. Ascoli, A., Corinto, F., Tetzlaff, R., Generalized boundary condition memristor model. International Journal of Circuit Theory and Applications, Early View, 3rd March 2015.
  20. Chen, F., Wang, H., Li, Ch., Impulsive Control of Memristive Chaotic Systems with Impulsive Time Window. Mathematical Problems in Engineering, Article ID 927327, pp.1-8, 2nd March 2015.
  21. Wang, L., Yang, C., Wen, J., Gai, S., Peng, Y., Overview of emerging memristor families from resistive memristor to spintronic memristor. Journal of Materials Science: Materials in Electronics, Springer Science+Business Media New York, pp.11, 1st March 2015.
  22. Anasane, K.J., Kshirsagar, U.A., A Review on Memristor MOS Content Addressable Memory (MCAM) Design Using 22nm VLSI Technology. International Journal of Scientific and Research Publications, vol.5, no.3, pp.4, March 2015.
  23. Duan, F.T., Cui, B.T., Synchronization of Memristor-Based Competitive Neural Networks with Different Time Scales. Applied Mechanics and Materials, vol.740, pp.238-242, March 2015.
  24. Shinde, S.S., Modelling of nanostructured TiO2 -based memristors. Journal of Semiconductors, vol.36, no.3, pp.3, March 2015.
  25. Cho, K., Lee, S.-J., Eshraghian, K., Memristor-CMOS logic and digital computational components. Microelectronics Journal, vol.46, no.3, pp.214-220, March 2015.
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