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Time of the last modification database: 2014-10-19 22:52:48
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  1. Dong, R., Yan, X., Zhang, Z., Wang, M., Memristive behavior and forming mechanism of homogeneous TiOx device. Materials Research Bulletin, vol.61, pp.101–104, January 2015.
  2. Pershin, Y.V., Traversa, F.L., Di Ventra, M., Memcomputing with membrane memcapacitive systems. arXiv:1410.3541v1, [cs.ET], 14th October 2014.
  3. Dimonte, A., Berzina, T., Pavesi, M., Erokhin, V., Hysteresis loop and cross-talk of organic memristive devices. Microelectronics Journal, In Press, Corrected Proof, pp.5, 11th October 2014.
  4. Rakkiyappan, R., Velmurugan, G., Cao, J., Stability analysis of memristor-based fractional-order neural networks with different memductance functions. Cognitive Neurodynamics, Springer Netherlands, 9th October 2014.
  5. Kyriakides, E., Georgiou, J., A compact, low-frequency, memristor-based oscillator. International Journal of Circuit Theory and Applications, Early View, 8th October 2014.
  6. Khedkar, G., Kudithipudi, D., Rose, G.S., Power Profile Obfuscation using Nanoscale Memristive Devices to Counter DPA Attacks. Nanotechnology, IEEE Transactions on, vol., no., pp.10, 8th October 2014.
  7. Siemon, A., Menzel, S., Waser, R., Linn, E., A Complementary Resistive Switch-based Crossbar Array Adder. arXiv:1410.2031v1, [cs.ET], 8th October 2014.
  8. Salaoru, I., Li, Q., Khiat, A., Prodromakis, T., Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices. Nanoscale Research Letters, pp.7, 4th October 2014.
  9. Stathis, D., Vourkas, I., Sirakoulis, G.Ch., Solving AI problems with memristors: A case study for optimal "bin packing". PCI '14 Proceedings of the 18th Panhellenic Conference on Informatics, pp.1-6, 2nd October 2014.
  10. Abunahla, H., Homouz, D., Halawani, Y., Mohammad, B., Modeling and device parameter design to improve reset time in binary-oxide memristors. Applied Physics A, Springer-Verlag Berlin Heidelberg, pp.5, 1st October 2014.
  11. Mihalache, I., Veca, L.M., Kusko, M., Dragoman, D., Memory effect in carbon quantum DOT–PEG1500N composites. Current Applied Physics, vol.14, no.12, pp.1625–1632, 30th September 2014.
  12. Han, J., Song, Ch., Gao, S., Wang, Y., Chen, Ch., Pan, F., Realization of the Meminductor. ACS Nano, 26th September 2014.
  13. Kim, S., Choi, S.H., Lee, J., Lu, W.D., Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping. ACS Nano, 25th September 2014.
  14. Messerschmitt, F., Kubicek, M., Schweiger, S., Rupp, J.L.M., Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3-δ Bits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance. Advanced Functional Materials, Early View, 25th September 2014.
  15. Vokhmintsev, A.S., Weinstein, I.A., Kamalov, R.V., Dorosheva, I.B., Memristive effect in a nanotubular layer of anodized titanium dioxide. Bulletin of the Russian Academy of Sciences: Physics, vol.78, no.9, pp.932-935, 24th September 2014.
  16. Kosta, S.P., Bhatele, M., Gupta, P., Nair, P., Kosta, S., Choubey, S.D., Thakre, L., Vaghela, P.R., Patel, K.N., Dave, B.K., Chavda, J., Bhatt, Ch., Nigam, T., Physical model of human blood electronic memristors network. International Journal of Biomechatronics and Biomedical Robotics, vol.3, no.2, pp.74-79, 23rd September 2014.
  17. Sirakoulis, G.Ch., Stathis, D., Vourkas, I., Shortest Path Computing Using Memristor-Based Circuits and Cellular Automata. Cellular Automata, Lecture Notes in Computer Science, pp.398-407, 22nd September 2014.
  18. Bavandpour, M., Bagheri-Shouraki, S., Soleimani, H., Ahmadi, A., Linares-Barranco, B., Spiking neuro-fuzzy clustering system and its memristor crossbar based implementation. Microelectronics Journal, In Press, Corrected Proof, 20th September 2014.
  19. Shenoy, R.S., Burr, G.W., Virwani, K., Jackson, B., Padilla, A., Narayanan, P., Rettner, Ch.T., Shelby, R.M., Bethune, D.S., Raman, K.V., BrightSky, M., Joseph, E., Rice, P.M., Topuria, T., Kellock, A.J., Kurdi, B., Gopalakrishnan, K., MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays. Semiconductor Science and Technology, vol.29, no.10, pp.11, 18th September 2014.
  20. Klimo, M., Šuch, O., Skvarek, O., Fratrik, M., Memristor-based pattern matching. Semiconductor Science and Technology, vol.29, no.10, pp.5, 18th September 2014.
  21. Fey, D., Using the multi-bit feature of memristors for register files in signed-digit arithmetic units. Semiconductor Science and Technology, vol.29, no.10, pp.13, 18th September 2014.
  22. Zheng, L., Shin, S., Kang, S.-M., Memristor-based ternary content addressable memory (mTCAM) for data-intensive computing. Semiconductor Science and Technology, vol.29, no.10, pp.10, 18th September 2014.
  23. Gale, E., TiO2-based memristors and ReRAM: materials, mechanisms and models (a review). Semiconductor Science and Technology, vol.29, no.10, pp.10, 18th September 2014.
  24. Flak, J., Lehtonen, E., Laiho, M., Rantala, A., Prunnila, M., Haatainen, T., Solid-state memcapacitive device based on memristive switch. Semiconductor Science and Technology, vol.29, no.10, pp.6, 18th September 2014.
  25. Gluskin, E., On the physical and circuit-theoretic significance of the Memristor. arXiv:1409.5370v2, [cs.ET], 18th September 2014.
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