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Time of the last modification database: 2014-08-22 22:43:39
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  1. Chen, L., Li, Ch., Huang, T., Ahmad, H.G., Chen, Y., A phenomenological memristor model for short-term/long-term memory. Physics Letters A, In Press, Accepted Manuscript, 19th August 2014.
  2. Junsangsri, P., Han, J., Lombardi, F., A Memristor - based Memory Cell with no Refresh. IEEE International Conference on Nanotechnology, pp.4, 18th August 2014.
  3. Gale, E., de Lacy Costello, B., Adamatzky, A., Emergent spiking in non-ideal memristor networks. Microelectronics Journal, In Press, Corrected Proof, 14th August 2014.
  4. Demin, V.A., Erokhin, V.V., Kashkarov, P.K., Kovalchuk, M.V., Electrochemical model of the polyaniline based organic memristive device. Journal of Applied Physics, vol.116, pp.9, 13th August 2014.
  5. Levy, Y., Bruck, J., Cassuto, Y., Friedman, E.G., Kolodny, A., Yaakobi, E., Kvatinsky, S., Logic operations in memory using a memristive Akers array. Microelectronics Journal, In Press, Corrected Proof, 13th August 2014.
  6. Chen, Y.-J., Chang, K.-C., Chang, T.-C., Chen, H.-L., Young, T.-F., Tsai, T.-M., Zhang, R., Chu, T.-J., Ciou, J.-F., Lou, J.-C., Chen, K.-H., Chen, J.-H., Zheng, J.-C., Sze, S.M., Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor. Electron Device Letters, IEEE, vol., no., pp.3, 12th August 2014.
  7. Morozovska, A.N., Eliseev, E.A., Varenyk, O.V., Kim, Y., Strelcov, E., Tselev, A., Morozovsky, N.V., Kalinin, S.V., Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response. Journal of Applied Physics, vol.116, pp.11, 11th August 2014.
  8. Whyte, J.R., McQuaid, R.G.P., Ashcroft, C.M., Einsle, J.F., Canalias, C., Gruverman, A., Gregg, J.M., Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”. Journal of Applied Physics, vol.116, pp.5, 11th August 2014.
  9. Wen, S., Zeng, Z., Huang, T., Yu, X., Noise cancelation of memristive neural networks. Neural Networks, In Press, Accepted Manuscript, 8th August 2014.
  10. Wen, Z., Wu, D., Li, A., Memristive behaviors in Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions. Applied Physics Letters, vol.105, no.5, pp.4, 7th August 2014.
  11. Velmurugan, G., Rakkiyappan, R., Lakshmanan, S., Passivity Analysis of Memristor-Based Complex-Valued Neural Networks with Time-Varying Delays. Neural Processing Letters, pp.24, 6th August 2014.
  12. Wu, H., Li, R., Zhang, X., Yao, R., Adaptive Finite-Time Complete Periodic Synchronization of Memristive Neural Networks with Time Delays. Neural Processing Letters, pp.21, 5th August 2014.
  13. Shen, W., Zeng, Z., Zou, F., A Fractional-Order Chaotic Circuit Based on Memristor and Its Generalized Projective Synchronization. Intelligent Computing Theory, vol.8588, pp.838-844, 3rd August 2014.
  14. Yu, D., Iu, H., Liang, Y., Chua, L.O., A Universal Mutator for Transformations Among Memristor, Memcapacitor and Meminductor. Circuits and Systems II: Express Briefs, IEEE Transactions on, vol., no., pp.5, 1st August 2014.
  15. Garcia, F., Lopez-Vallejo, M., Ituero, P., Building Memristor Applications: From Device Model to Circuit Design. Nanotechnology, IEEE Transactions on, vol., no., pp.8, 31st July 2014.
  16. Goknar, I.C., Minayi, E., Realizations of mutative 4-ports and their applications to memstor simulations. Analog Integrated Circuits and Signal Processing, pp.14, 31st July 2014.
  17. Chen, J., Zeng, Z., Jiang, P., Global exponential almost periodicity of a delayed memristor-based neural networks. Neural Networks, In Press, Accepted Manuscript, 28th July 2014.
  18. Lee, S., Sangle, A., Lu, P., Chen, A., Zhang, W., Lee, J.S., Wang, H., Jia, Q., MacManus-Driscoll, J.L., Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density. Advances Materials, Early View, pp.6, 28th July 2014.
  19. Goknar, I.C., Minaei, S., Yıldız, M., Yuce, E., Memstor, Memstance Simulations via a Versatile 4-port Built with New Adder and Subtractor Circuits. International Journal of Electronics, 24th July 2014.
  20. Yu, D., Iu, H.H.-C., Fitch, A.L., Liang, Y., A Floating Memristor Emulator Based Relaxation Oscillator. Circuits and Systems I: Regular Papers, IEEE Transactions on, vol., no., pp.1,9, 22nd July 2014.
  21. Duan, S., Hu, X., Dong, Z., Wang, L., Mazumder, P., Memristor-Based Cellular Nonlinear/Neural Network: Design, Analysis, and Applications. Neural Networks and Learning Systems, IEEE Transactions on, vol., no.,pp.12, 21st July 2014.
  22. Molina, J., Valderrama, R., Zuniga, C., Rosales, P., Calleja, W., Torres, A., DeLa Hidalga, J., Gutierrez, E., Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al2O3/Al and Al/Al2O3/W structures fabricated on glass at 300 °C. Microelectronics Reliability, In Press, Corrected Proof, 21st July 2014.
  23. Mladenov, V., Kirilov, S., Synthesis and Analysis of a Memristor F requen cy Converter for Radio - receiver. Advances in Robotics, Mechatronics and Circuits, pp.190-193, 17th July 2014.
  24. Biolek, D., Biolková, V., Kolka, Z., Emulators of Two-State Memcapacitor. Advances in Robotics, Mechatronics and Circuits, pp.65-70, 17th July 2014.
  25. Abuelma’atti, M.T., Khalifa, Z.J., A new memristor emulator and its application in digital modulation. Analog Integrated Circuits and Signal Processing, pp.8, 15th July 2014.
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