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Time of the last modification database: 2014-03-04 23:33:24
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  1. Hota, M.K., Bera, M.K., Maiti, C.K., Switching Mechanism in Au Nanodot-Embedded Nb2O5 Memristors. Journal of Nanoscience and Nanotechnology, vol.14, no.5, pp.3538-3544, May 2014.
  2. Hjalmarson, H., McLain, M., Mamaluy, D., Gao, X., Memristor Physics Driven by Joule Heating. Bulletin of the American Physical Society, vol.59, no.1, 6th March 2014.
  3. Kirilyuk, I., Gergel-Hackett, N., Low-cost Flexible Memristor Fabrication. Bulletin of the American Physical Society, vol.59, no.1, 3rd March 2014.
  4. Yeşil, A., Babacan, Y., Kaçar, F., A new DDCC based memristor emulator circuit and its applications. Microelectronics Journal, vol.45, no.3, pp.282–287, March 2014.
  5. Zeng, Z., Chen, J., Jiang, P., Global Mittag-Leffler stability and synchronization of memristor-based fractional-order neural networks. Neural Networks, vol.51, pp.1-8, March 2014.
  6. Jankovic-Raznatovic, S., Dragojevic-Dikic, S., Rakic, S., Nikolic, B., Plesinac, S., Tasic, L., Perisic, Z., Sovilj, M., Adamovic, T., Koruga, D., Fetus Sound Stimulation: Cilia Memristor Effect of Signal Transduction. BioMed Research International, vol.2014, Article ID 273932, pp.6, 26th February 2014.
  7. Kim, S., Choi, S., Lu, W., Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor. ACS Nano, pp.8, 26th February 2014.
  8. Wu, S., Ren, L., Yu, F., Yang, K., Yang, M., Wang, Y., Meng, M., Zhou, W., Li, S., Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor. Applied Physics A, pp.5, Springer-Verlag Berlin Heidelberg, 26th February 2014.
  9. You, T., Shuai, Y., Luo, W., Du, N., Bürger, D., Skorupa, I., Hübner, R., Henker, S., Mayr, Ch., Schuffny, R., Mikolajick, T., Schmidt, O.G., Schmidt, H., Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics. Advanced Functional Materials, Early View, pp.9, 24th February 2014.
  10. Wang, W., Wang, G., Wang, X., Research on a chaotic circuit based on an activeTiO2 memristor. Systems Science & Control Engineering, pp.5, 20th February 2014.
  11. Mazady, A., Anwar, M., Memristor: Part II--DC, Transient, and RF Analysis. Electron Devices, IEEE Transactions on, vol., no., pp.9, 19th February 2014.
  12. Gater, D., Iqbal, A., Davey, J., Gale, E., Connecting Spiking Neurons to a Spiking Memristor Network Changes the Memristor Dynamics. arXiv:1402.4029v1, [cs.ET], 17th February 2014.
  13. Gale, E., de Lacy Costello, B., Erokhin, V., Adamatzky, A., The Short-term Memory (D.C. Response) of the Memristor Demonstrates the Causes of the Memristor Frequency Effect. arXiv:1402.4013v1, [cs.ET], 17th February 2014.
  14. Gale, E., de Lacy Costello, B., Adamatzky, A., Is Spiking Logic the Route to Memristor-Based Computers?. arXiv:1402.4036v1, [cs.ET], 17th February 2014.
  15. Teng, L., Iu, H.H.C., Wang, X., Chaotic behavior in fractional-order memristor-based simplest chaotic circuit using fourth degree polynomial. Nonlinear Dynamics, pp.11, 14th February 2014.
  16. Lin, D., Hui, S.Y.R., Chua, L.O., Gas Discharge Lamps Are Volatile Memristors. Circuits and Systems I: Regular Papers, IEEE Transactions on, vol., no., pp.8, 12th February 2014.
  17. Huang, D., Wu, J.-J., Tang, Y.-H., Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor. Chinese Physics B, vol.23, no.3, pp.6, 12th February 2014.
  18. Fan, D., Sharad, M., Roy, K., Design and Synthesis of Ultra Low Energy Spin-Memristor Threshold Logic. arXiv:1402.2648v1, [cs.ET], 10th February 2014.
  19. Puppo, F., Di Ventra, M., De Micheli, G., Carrara, S., Memristive sensors for pH measure in dry conditions. Surface Science, In Press, Uncorrected Proof — Note to users, 9th February 2014.
  20. Wang, Z., Zhao, W., Kang, W., Zhang, Y., Klein, J.-O., Ravelosona, D., Chappert, C., Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation. Applied Physics Letters, vol.104, pp.6, 6th February 2014.
  21. Yen, W.-Ch., Lin, S.-M., Lee, Ch.-Y., Chin, T.-S., Wu, J., Wang, Z.M., Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control of selector to memristor. Journal of Materials Chemistry C, 6th February 2014.
  22. Quindeau, A., Hesse, D., Alexe, M., Programmable ferroelectric tunnel memristor. Frontiers in Physics, 3rd February 2014.
  23. Bai, X.H., Li, L.L., Ai, Ch.P., Mechanism of Memristor with TiO2-x/TiO2/TiO2+x Nano Thin Three Layers. Advanced Materials Research, Nanomaterials and Nanotechnologies, vol.893, pp.178-181, February 2014.
  24. Di Ventra, M., Pershin, Y.V., Memcapacitive neural networks. Electronics Letters, vol.50, no.3, pp.141-143, 30th January 2014.
  25. Wang, W., Li, L., Peng, H., Xiao, J., Yang, Y., Synchronization control of memristor-based recurrent neural networks with perturbations. Neural Networks, In Press, Accepted Manuscript — Note to users, 28th January 2014.
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