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Time of the last modification database: 2014-10-31 15:58:28
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  1. Sheri, A.M., Rafique, A., Pedrycz, W., Jeon, M., Contrastive divergence for memristor-based restricted Boltzmann machine. Engineering Applications of Artificial Intelligence, vol.37, pp.336–342, January 2015.
  2. Dong, R., Yan, X., Zhang, Z., Wang, M., Memristive behavior and forming mechanism of homogeneous TiOx device. Materials Research Bulletin, vol.61, pp.101–104, January 2015.
  3. Ibrayev, T., Fedorova, I., Maan, A.K., James, A.P., On Design of Memristive Amplifier Circuits. Circuits and Systems, vol.5, no.11, pp.265-273, November 2014.
  4. Kornijcuk, V., Kavehei, O., Lim, H., Seok, J.E., Kim, S.K., Kim, I., Lee, W.-S., Choi, B.J., Jeong, D.S., Multiprotocol-induced plasticity in artificial synapses. Nanoscale, Accepted Manuscript, 24th October 2014.
  5. Zinov, V.G., Kurakova, N.G., Tsvetkova, L.A., Breakthrough scientific research areas: Formalization of the concept and status validation criteria. Scientific and Technical Information Processing, vol.41.no.3, pp.194-200, 24th October 2014.
  6. Horváth, I., Elmer, G., Simulation of memristors conducting alternating current Simulation of memristors conducting alternating current. Pollack Periodica, vol.9, no.3, pp.71-78, 22nd October 2014.
  7. Zidan, M., Omran, H., Sultan, A., Fahmy, H., Salama, K., Compensated Readout for High Density MOS-Gated Memristor Crossbar Array. Nanotechnology, IEEE Transactions on, vol., no., pp.3, 22nd October 2014.
  8. O'Kelly, C., Fairfield, J.A., Boland, J.J., A Single Nanoscale Junction with Programmable Multilevel Memory. ACS Nano, pp.15, 17th October 2014.
  9. Ferch, S., Linn, E., Waser, R., Menzel, S., Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model. Microelectronics Journal, In Press, Corrected Proof, 16th October 2014.
  10. Seyidov, M.Y., Suleymanov, R.A., Balaban, E., Şale, Y., Field induced rectification and memristive behavior of TlGaSe2 layered semiconductor. Applied Physics Letters, vol.105, no.15, pp.4, 16th October 2014.
  11. Hongal, V., Kotikalapudi, R., Choi, M., Design, Test, and Repair of MLUT (Memristor Look-Up Table) Based Asynchronous Nanowire Reconfigurable Crossbar Architecture. Emerging and Selected Topics in Circuits and Systems, IEEE Journal on, vol., no., pp.11, 15th October 2014.
  12. Chang, M., Yang, S., Kuo, C., Yang, T., Yeh, C., Chien, T., Huang, L., Sheu, S., Tseng, P., Chen, Y., Chen, F., Ku, T., Tsai, M., Kao, M., Set-Triggered-Parallel-Reset Memristor Logics for High-Density Heterogeneous-Integration Friendly Normally-Off Applications. Circuits and Systems II: Express Briefs, IEEE Transactions on, vol., no., pp.5, 14th October 2014.
  13. Pershin, Y.V., Traversa, F.L., Di Ventra, M., Memcomputing with membrane memcapacitive systems. arXiv:1410.3541v1, [cs.ET], 14th October 2014.
  14. Dimonte, A., Berzina, T., Pavesi, M., Erokhin, V., Hysteresis loop and cross-talk of organic memristive devices. Microelectronics Journal, In Press, Corrected Proof, pp.5, 11th October 2014.
  15. Rakkiyappan, R., Velmurugan, G., Cao, J., Stability analysis of memristor-based fractional-order neural networks with different memductance functions. Cognitive Neurodynamics, Springer Netherlands, 9th October 2014.
  16. Kyriakides, E., Georgiou, J., A compact, low-frequency, memristor-based oscillator. International Journal of Circuit Theory and Applications, Early View, 8th October 2014.
  17. Khedkar, G., Kudithipudi, D., Rose, G.S., Power Profile Obfuscation using Nanoscale Memristive Devices to Counter DPA Attacks. Nanotechnology, IEEE Transactions on, vol., no., pp.10, 8th October 2014.
  18. Siemon, A., Menzel, S., Waser, R., Linn, E., A Complementary Resistive Switch-based Crossbar Array Adder. arXiv:1410.2031v1, [cs.ET], 8th October 2014.
  19. Salaoru, I., Li, Q., Khiat, A., Prodromakis, T., Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices. Nanoscale Research Letters, pp.7, 4th October 2014.
  20. Stathis, D., Vourkas, I., Sirakoulis, G.Ch., Solving AI problems with memristors: A case study for optimal "bin packing". PCI '14 Proceedings of the 18th Panhellenic Conference on Informatics, pp.1-6, 2nd October 2014.
  21. Abunahla, H., Homouz, D., Halawani, Y., Mohammad, B., Modeling and device parameter design to improve reset time in binary-oxide memristors. Applied Physics A, Springer-Verlag Berlin Heidelberg, pp.5, 1st October 2014.
  22. Mihalache, I., Veca, L.M., Kusko, M., Dragoman, D., Memory effect in carbon quantum DOT–PEG1500N composites. Current Applied Physics, vol.14, no.12, pp.1625–1632, 30th September 2014.
  23. Pino, R.E., Pino, Y.K., Reconfigurable Memristor Based Computing Logic. Cybersecurity Systems for Human Cognition Augmentation, Advances in Information Security, vol.61, pp.175-182, 27th September 2014.
  24. Pino, R.E., Oblea, A.S., Campbell, K.A., Memristor SPICE Model Simulation and Device Hardware Correlation. Cybersecurity Systems for Human Cognition Augmentation, Advances in Information Security, vol.61, pp.169-174, 27th September 2014.
  25. Pino, R.E., Kott, A., Neuromorphic Computing for Cognitive Augmentation in Cyber Defense. Cybersecurity Systems for Human Cognition Augmentation, Advances in Information Security, vol.61, pp.19-45, 27th September 2014.
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