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Time of the last modification database: 2020-04-02 20:12:33
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  1. Nahm, S., Lee, T.-G., Park, S.-M., Hwang, H.-G., Woo, J.-U., Improvement in conductance modulation linearity of artificial synapses based on NaNbO3 memristor. Applied Materials Today, vol.19, pp.1-8, June 2020.
  2. Sokolov, A.S., Jeon, Y.-R., Ku, B., Choi, C., Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse. Journal of Alloys and Compounds, vol.822, pp.1-11, 5th May 2020.
  3. He, N., Liu, X., Gao, F., Zhang, Q., Zhang, M., Wang, Y., Shen, X., Wan, X., Lian, X., Hu, E., He, L., Xu, J., Tong, Y., Demonstration of 2D MXene Memristor: Stability, Conduction Mechanism, and Synaptic Plasticity. Materials Letters, vol.266, pp.1-4, 1st May 2020.
  4. Dong, Y., Wang, G., Chen, G., Shen, Y., Ying, J., A Bistable Nonvolatile Locally-active Memristor and its Complex Dynamics. Communications in Nonlinear Science and Numerical Simulation, vol.84, pp.1-21, May 2020.
  5. Jin, S., Pei, S., Wang, Y., A variation tolerant scheme for memristor crossbar based neural network designs via two-phase weight mapping and memristor programming. Future Generation Computer Systems, vol.106, pp.270-276, May 2020.
  6. Cai, Z., Huang, L., Wang, Z., Mono/multi-periodicity generated by impulses control in time-delayed memristor-based neural networks. Nonlinear Analysis: Hybrid Systems, vol.36, pp.1-20, May 2020.
  7. Jang, J.T., Min, J., Kim, D., Park, J., Choi, S.-J., Kim, D.M., Cho, S., Kim, D.H., A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence. Solid-State Electronics, vol.166, April 2020.
  8. Shen, J., Zhou, B., Wang, F., Wan, Q., Shan, X., Li, C., Lin, X., Zhang, K., Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor. Nanotechnology, pp.1-24, 24th March 2020.
  9. Dowling, V.J., Slipko, V.A., Pershin, Y.V., Probabilistic Memristive Networks--Part I: Application of a Master Equation to Networks of Binary ReRAM cells. arXiv:2003.11011, [cs.ET], 24th March 2020.
  10. Upadhyay, N.K., Sun, W., Lin, P., Joshi, S., Midya, R., Zhang, X., Wang, Z., Jiang, H., Yoon, Y.H., Rao, M., Chi, M., Xia, Q., Yang, J.J., A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation. Advanced Electronic Materials, 22nd March 2020.
  11. Shan, F., Guo, H.-B., Kim, H.-S., Lee, J.-Y., Sun, H.-Z., Choi, S.G., Koh, J.-H., Kim, S.-J., Enhanced Electrical Performance of Structurally Engineered Memristor Devices with Multi‐Stacked Indium Zinc Oxide Films. Physica Status Solidi, Applications and Material Science, pp.1-16, 21st March 2020.
  12. Berco, D., Ang, D.S., Analysis of Large Bandgap Dielectrics by Dual Plasmon-Photon Excitation. Journal of Physics D: Applied Physics, pp.1-16, 20th March 2020.
  13. Ali, K.A., Rizk, M., Baghdadi, A., Diguet, J.-P., Jomaah, J., Memristor Overwrite Logic (MOL) for In-Memory DNN. Conference paper, 20th March 2020.
  14. Yuan, M., Wang, W., Wang, Z., Luo, X., Kurths, J., Exponential Synchronization of Delayed Memristor-Based Uncertain Complex-Valued Neural Networks for Image Protection. IEEE Transactions on Neural Networks and Learning Systems, pp.1-15, 19th March 2020.
  15. Kumar, S., Agrawal, R., Das, M., Kumar, P., Mukherjee, S., Analytical modeling of Y 2 O 3-based memristive system for synaptic applications. Journal of Physics D: Applied Physics, pp.1-12, 18th March 2020.
  16. Wang, T.-Y., Meng, J.-L., Rao, M.-Y., He, Z.-Y., Chen, L., Zhu, H., Sun, Q.-Q., Ding, S.-J., Bao, W.-Z., Zhou, P., Zhang, D.W., 3D Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application. Nano Letters, pp.1-10, 18th March 2020.
  17. Ma, C., Luo, Z., Huang, W., Zhao, L., Chen, Q., Lin, Y., Liu, X., Chen, S., Liu, C., Sun, H., Jin, X., Yin, Y., Li, X., Sub-nanosecond memristor based on ferroelectric tunnel junction. Nature Communications, vol.11, no.1439, pp.1-9, 18th March 2020.
  18. Shibata, T., Shinohara, T., Ashida, T., Ohta, M., Ito, K., Yamada, S., Terasaki, Y., Sasaki, T., Linear and symmetric conductance response of magnetic domain wall type spin-memristor for analog neuromorphic computing. Applied Physics Express, vol.13, no.4, pp.1-4, 18th March 2020.
  19. Fernandez, C., Vourkas, I., Rubio, A., Shortest Path Computing in Directed Graphs with Weighted Edges Mapped on Random Networks of Memristors. Parallel Processing Letters, vol.30, no.1, pp.1-19, 17th March 2020.
  20. Veeralingam, S., Khandelwal. S., Sha, R., Badhulika, S., Direct growth of FeS2 on paper: A flexible, multifunctional platform for ultra-low cost, low power memristor and wearable non-contact breath sensor for activity detection. Materials Science in Semiconductor Processing, vol.108, pp.1-11, 15th March 2020.
  21. Simanjuntak, F., Ohno, T., Chandrasekaran, S., Tseng, T.-Y., Samukawa, S., Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications. Nanotechnology, pp.1-23, 13th March 2020.
  22. Qin, X., Wang, C., Li, L., Peng, H., Ye, L., Finite-time Lag Synchronization of Memristor-based Neural Network with Multi-links via Adaptive Control. IEEE Access, vol.8, pp.1-13, 12th March 2020.
  23. Mikheev, V., Chouprik, A., Lebedinskii, Y., Zarubin, S., Markeev, A.M., Zenkevich, A.V., Negrov, D., Memristor with a ferroelectric HfO 2 layer: In which case it is a ferroelectric tunnel junction. Nanotechnology, vol.31, no.21, pp.1-8, 12th March 2020.
  24. Zhao, Z., Qu, L., Wang, L., Deng, Q., Li, N., Kang, Z., Guo, S., Xu, W., A Memristor-Based Spiking Neural Network with High Scalability and Learning Efficiency. IEEE Transactions on Circuits and Systems II: Express Briefs, 11th March 2020.
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