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Time of the last modification database: 2018-08-14 16:14:46
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  1. Zhang, Y., Yu, Y., Cui, X., Dynamical behaviors analysis of memristor-based fractional-order complex-valued neural networks with time delay. Applied Mathematics and Computation, vol.339, pp.242-258, 15th December 2018.
  2. Rostami, Z., Pham, V.-T., Jafari, S., Hadaeghi, F., Ma, J., Taking control of initiated propagating wave in a neuronal network using magnetic radiation. Applied Mathematics and Computation, vol.338, pp.141-151, 1st December 2018.
  3. Zhang, G., Wu, F., Hayat, T., Ma, J., Selection of spatial pattern on resonant network of coupled memristor and Josephson junction. Communications in Nonlinear Science and Numerical Simulation, vol.65, pp.79-90, December 2018.
  4. Domaradzki, J., Mazur, M., Kotwica, T., Analysis of memristor-like behaviors in Au/Ti52Cu48Ox/TiAlV structure with gradient elements distribution. Materials Science in Semiconductor Processing, vol.87, pp.167-173, 15th November 2018.
  5. Santos, Y.P., Valença, E., Machado, R., Macêdo, M.A., A novel structure ZnO-Fe-ZnO thin film memristor. Materials Science in Semiconductor Processing, vol.86, pp.43-48, 1st November 2018.
  6. Dongale, T.D., Mullani, N.B., Patil, V.B., Tikke, R.S., Pawar, P.S., Mohite, S.V., Teli, A.M., Bagade, A.A., Pawar, K.K., Khot, K.V., Shinde, S.S., Patil, V.L., Vanalkar, S.A., Moholkar, A.V., Bhosale, A.V., Patil, P.S., Kamat, R.K., Mimicking the Biological Synapse Functions of Analog Memory, Synaptic Weights, and Forgetting with ZnO-Based Memristive Devices. Journal of Nanoscience and Nanotechnology, vol.18, no.11, pp.7758-7766(9), November 2018.
  7. Chakrabartty, S., Kumar, S., Song, H., Jeon, M., Ag/TiO2 NPs/TiO2 TF/Si Based Non-Volatile Memristor Device for Neuromorphic Computing Applications. Journal of Nanoscience and Nanotechnology, vol.11, no.18, pp.7912-7916(5), November 2018.
  8. Dash, C.S., Sahoo, S., Prabaharan, S.R.S., Resistive switching and impedance characteristics of M/TiO2− x/TiO2/M nano-ionic memristor. Solid State Ionics, vol.324, pp.218-225, 15th October 2018.
  9. Pisarev, A., Busygin, A., Udovichenko, S., Maevsky, O., 3D memory matrix based on a composite memristor-diode crossbar for a neuromorphic processor. Microelectronic Engineering, vol.198, pp.1-7, 15th October 2018.
  10. Chiappone, A., Gillono, M., Castellino, M., Bejtka, K., Rajan, K., Roppolo, I., Perrone, D., Bocchini, S., Ricciardi, C., Pirri, C.F., Chiolerio, A., In situ generation of silver nanoparticles in PVDF for the development of resistive switching devices. Applied Surface Science, vol.455, pp.418-424, 15th October 2018.
  11. Ponce, E., Ros, J., Vela, E., The boundary focus–saddle bifurcation in planar piecewise linear systems. Application to the analysis of memristor oscillators. Nonlinear Analysis: Real World Applications, vol.43, pp.495–514, October 2018.
  12. Ravi, V., Prabaharan, S.R.S., Fault tolerant adaptive write schemes for improving endurance and reliability of memristor memories. AEU - International Journal of Electronics and Communications, vol.94, pp.392-406, September 2018.
  13. Rajagopal, K., Jahanshahi, H., Varan, M., Bayır, I., Pham, V.-T., Jafari, S., Karthikeyan, A., A hyperchaotic memristor oscillator with fuzzy based chaos control and LQR based chaos synchronization. AEU - International Journal of Electronics and Communications, vol.94, pp.55-68, September 2018.
  14. Ochs, K., Solan, E., Energetically Consistent Modeling of Passive Memelements. AEU - International Journal of Electronics and Communications, vol.93, pp.1-7, September 2018.
  15. Abbas, Y., Sokolov, A.S., Jeon, Y.-R., Kim, S., Ku, B., Choi, C., Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing. Journal of Alloys and Compounds, vol.759, pp.44-51, 30th August 2018.
  16. Wang, Z., Rao, M., Han, J.-W., Zhang, J., Lin, P., Li, Y., Song, W., Asapu, S., Midya, S., Zhuo, Y., Jiang, H., Yoon, J.-H., Upadhyay, N.K., Joshi, S., Hu, M., Strachan, J.P., Barnell, M., Wu, Q., Wu, H., Qiu, Q., Williams, R.S., Xia, Q., Yang, J.J., Capacitive neural network with neuro-transistors. Nature Communications, vol.9, no.3208, pp.1-10, 10th August 2018.
  17. Liu, J., Yang, H., Ji, Y., Ma, Z., Chen, K., Zhang, X., Zhang, H., Sun, Y., Huang, X., Oda, S., An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics. Nanotechnology, vol.29, no.41, 10th August 2018.
  18. Shang, L., Duan, S., Wang, L., Huang, T., SRMC: A Multibit Memristor Crossbar for Self-Renewing Image Mask View Document. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, pp.1-12, 9th August 2018.
  19. Xu, N., Yoon, K.J., Kim, K.M., Fang, L., Hwang, C.S., Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor. Advanced Electronic Materials, 6th August 2018.
  20. Koymen, I., Gokturk, P.A., Kocabas, C., Suzer, S., Chemically addressed switching measurements in graphene electrode memristive devices using in-situ XPS. Faraday Discussions, pp.1-18, 6th August 2018.
  21. Xiong, L., Lu, Y., Zhang, Y., Zhang, X., A novel memductor-based chaotic system and its applications in circuit design and experimental validation. Complexity, pp.1-23, 5th August 2018.
  22. Devi, J., Das, B., Sarma, S., Datta, P., Non-linear model of nanoscale devices for memory application. Indian Journal of Physics, pp.1-10, 4th August 2018.
  23. Kadhim, M.S., Yang, F., Sun, B., Wang, Y., Guo, T., Jia, Y., Yuan, L., Yu, Y., Zhao, Y., A resistive switching memory device with a negative differential resistance at room temperature. Applied Physics Letters, vol.113, no.5, pp.1-5, 2nd August 2018.
  24. Krestinskaya, O., James, A.P., Approximate Probabilistic Neural Networks with Gated Threshold Logic. arXiv:1808.00733, [cs.ET], 2nd August 2018.
  25. Dolzhikova, I., Salama, K., Kizheppatt, V., James, A., Memristor-based Synaptic Sampling Machines. arXiv:1808.00679, [cs.ET], 2nd August 2018.
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